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The HC2300 is the N-Channel logic enhancement mode power field
effect transistors are produced using high cell density, DMOS trenchtechnology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits
where high-side switching and low in-line power loss are needed in a
verysmall outline surface mount package.
FEATURES
● RDS(ON)≦30mΩ@VGS=4.5V
● RDS(ON)≦40mΩ@VGS=2.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DCcurrent
capability
APPLICATIONS
● Power Management in Note book
● Portable Equipment
● Load Switch
● DSC